Ultra-fast field emitter array vacuum integrated circuit switching device
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsHenry F. Gray, Richard F. Greene
Life of this patent
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Abstract
A field-emitter switching device wherein a positive pulse is applied to a te (which is held at a bias potential V.sub.1 just below turn-on). A collector is held at a potential higher than the gate in order to collect emitted electrons from a field emitter source. As the voltage is applied to the gate, electrons are emitted immediately from the source and travel to the most positive potential at the collector. Because of the field emitter geometry, such electron transport is extremely fast. The ultra-fast switching speed is attained because the electrons reach near-maximum velocity within a few field tip diameters of the source.
Claims7
An ultra-fast microminiature planar switching device comprising:
- an electron-emissive substrate;
- an insulating layer formed over a surface of the substrate;
- a field-emission cathode comprised by an opening formed in the insulating layer exposing a part of the underlying substrate, with the central region of the exposed underlying material forming a raised emitting tip integral with the underlying substrate;
- a gate electrode for control of electron extraction from the field-emission cathode comprised by a first metallization located on the insulating layer and adjacent to the opening;
- a collector electrode for collection of substantially all electron emission from the field-emission cathode comprised by a second metallization located on the insulating layer and separated from the first metallization;
- and
- means for supplying an input signal to the gate to cause emission and travel of electrons from the field emission cathode to the collector and for extracting an output signal from the collector.
Dependencies are inferred from the claim text.