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US 4,560,420 AGranted
Method for reducing temperature variations across a semiconductor wafer during heating
AssigneeAT&T Technologies, Inc.
InventorHerbert A. Lord
Life of this patent
Estimating the term…
Abstract
Temperature variations across the surface of a semiconductor wafer (12), having at least one major surface thereof exposed to a source of radiant heat energy (18), are reduced by positioning a reflective ring (30, 30', 30" or 30'") proximate the wafer edge (28). The reflective ring (30, 30', 30" or 30'") reflects the heat energy towards the wafer periphery (27) to provide substantially uniform heat across the wafer.
Claims3
A method for achieving lateral growth over oxide or a semiconductor wafer having first and second major surface comprising the steps of:
- exposing only the first surface of the wafer to a source of radiant energy;
- and
- providing a body spaced from the second surface of the wafer distal from the source of radiant heat energy for reflecting radiant heat energy towards selected areas of the wafer to reduce temperature variations thereacross.
Dependencies are inferred from the claim text.