Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
AssigneeU.S. Philips Corporation
InventorsGerardus G. P. van Gorkom, Arthur M. E. Hoeberechts
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Abstract
The invention relates to a method for displaying a pattern on a resist using electron lithography. In particular, a cathode device having a matrix of semiconductor cathodes generates an electron beam which exposes a resist layer. The electron beam is generated by applying control signals to selected ones of the matrix of cathodes to cause electron emission therefrom.
Claims7
A method of displaying a pattern on a photoresist layer using electron lithography comprising the steps of generating an electron pattern from a matrix of cathodes formed in a semiconductor device comprising a silicon slice covered by a photoresist layer by applying control signals to selected ones of said cathodes to cause electron emission, and exposing said photoresist layer with said electron pattern, wherein each cathode of said matrix has two connection electrodes and an accelerating electrode, and wherein said cathodes providing electron emission are selected by applying a potential to their connection electrodes for generating electrons from each of said selected cathodes as an electron beam having an intensity dependent on a potential applied to said accelerating electrode of that cathode.
Dependencies are inferred from the claim text.