Continuous system for depositing amorphous semiconductor material

A system for the continuous production of semiconductor devices wherein a plurality of semiconductor layers are continuously deposited onto a moving substrate, said system comprising:

• (a) a substrate feed chamber for housing a substrate feed reel adapted to supply the substrate for deposition;
• (b) a substrate take-up chamber for housing a substrate take-up reel adapted to collect the substrate after deposition;
• (c) at least three dedicated, operatively interconnected deposition chambers;
• at least one of the chambers being dedicated for the deposition of a p-type semiconductor layer, at least one of the chambers being dedicated for the deposition of an i-type amorphous semiconductor layer, and at least one of the chambers being dedicated for the deposition of an n-type semiconductor layer;
• (d) means for sequentially and continuously advancing the substrate from the feed reel in the supply chamber, through the deposition chambers, and onto the take-up reel in the take-up chamber;
• (e) reaction gases, said gases including at least one semiconductor material;
• (f) means for introducing the reaction gases into each deposition chamber;
• (g) isolation means operatively interconnecting each pair of adjacent deposition chambers for (1) providing a passageway through which the substrate is adapted to travel between each pair of adjacent chambers, and (2) substantially preventing the free flow of reaction gases between each pair of adjacent chambers;
• whereby the reaction gases introduced into one chamber of the pair of adjacent deposition chambers are substantially protected from contamination by the reaction gases introduced into the adjacent chamber of the pair;
• (h) the feed chamber, the take-up chamber, the at least three deposition chambers and the isolation means being evacuated, thereby isolating the entire path of travel of the substrate through the deposition system from ambient conditions;
• (i) decomposition means in each decomposition chamber, each of said decomposition means adapted to form a decomposition region for disassociating the reaction gases introduced into each decomposition chamber and depositing a semiconductor layer onto the substrate;
• (j) the introducing means adapted to introduce the reaction gases into each deposition chamber proximate the decomposition region;
• said introducing means including baffle means adapted to provide a substantially uniform flow and a substantially uniform pressure of reaction gases across the entire surface of the substrate as the substrate passes through the decomposition region;
• (k) an exhaust port disposed proximate the decomposition region of each deposition chamber;
• (l) means for uniformly withdrawing nondeposited raaction gases from the exhaust port of each deposition chamber;
• said withdrawing means cooperating with the gas introducing means and the isolation means to substantially prevent nondeposited reaction gases from one chamber of a pair of deposition chambers from diffusing through the isolation means passageway and contaminating the reaction gases in the adjacent chamber;
• (m) means for regulating the supply of reaction gases into and from each of the deposition chambers;
• (n) means for heating and regulating the temperature of said substrate in each of the deposition chambers;
• and
• (o) means for regulating the frequency and power of the decomposition means in each of the deposition chambers, whereby the apparatus is adapted to continuously deposit successive, high quality semiconductor layers onto the substrate as the substrate passes from the feed chamber, through each of the at least three interconnected deposition chambers, and into the take-up chamber.