Semiconductor device with multi-layered structure
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsShunichi Hiraki, Kuniaki Kumamaru, Yutaka Koshino, Toshio Yonezawa
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Abstract
A semiconductor device comprising a substrate means, a semiconductor layer of an N conductivity type formed on the substrate means, a first semiconductor region of a P conductivity type formed in the semiconductor layer and having its exposed major surface, a second semiconductor region of the N conductivity type formed in the first semiconductor region and having its exposed major surface, a first insulation layer means having a positive polarity type of charge and formed on the N semiconductor layer, and a second insulation layer means having a negative polarity type of charge and formed on the P semiconductor region.
Claims12
A planer type semiconductor device comprising:
- a semiconductor body of a first conductivity type having an exposed surface;
- a first semiconductor region of a second conductivity type formed in and extending to the exposed surface of said semiconductor body to form an exposed surface and to form an exposed P-N junction;
- a second semiconductor region of the first conductivity type formed in and extending to the exposed surface of said first semiconductor region;
- a SiO.sub.2 film formed on the exposed surfaces of said semiconductor body and first semiconductor region, with said SiO.sub.2 film covering said exposed P-N junction formed between said semiconductor body and said first semiconductor region;
- a first insulation structure formed on the area of said SiO.sub.2 film which is on said exposed surface of said semiconductor body, the first insulation structure having a first polarity of charge opposite the polarity of said first conductivity type;
- a second insulation structure formed on the area of said SiO.sub.2 film which is on the exposed surface of said first semiconductor region, the second insulation structure having a second polarity of charge opposite the polarity of said second conductivity type;
- a first electrode formed on said second semiconductor region;
- and
- a second electrode formed on said first semiconductor region and extending over said first and second insulation structures.
Dependencies are inferred from the claim text.