Process for the manufacture of semiconductor wafers with a rear side having a gettering action
AssigneeWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
InventorsJosef Kramler, Franz Kuhn-Kuhnenfeld, Hans-Adolf Gerber
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Abstract
For the manufacture of semiconductor wafers with a rear side having a geting action in subsequent oxidation processes by means of the action of light, especially laser, radiation ("laser damage"), there are advantageously chosen wafers with a fine surface structure that contains faces that are inclined by at least 15.degree. in the actual profile by comparison with the geometrically ideal profile of the surface according to known standards. As a result, in comparison to smooth surfaces, considerable savings in energy and time are achieved.
Claims12
A process for the manufacture of semiconductor wafers with a rear side having a gettering action by the action of light radiation so as to induce a gettering dislocation network in subsequent high-temperature processes, comprising the steps of:
- selecting semiconductor wafers each having a rear side that contains in its fine surface structure faces that are inclined by at least 15.degree. with respect to the geometrically ideal surface of the wafer;
- and
- melting parts of the rear sides of said wafers by the action of light radiation so as to induce a gettering dislocation network in the surface region of the rear side of the wafers, the incident energy density of said light radiation employed in said melting step being 20 to 80% of the energy density that is necessary for producing a similarly dense dislocation network in a mirror-polished surface of a wafer.
A process for the manufacture of semiconductor wafers with a rear side having a gettering action by the action of light radiation so as to induce a gettering dislocation network in subsequent high-temperature processes, comprising the steps of:
- selecting damage-free semiconductor wafers each having a rear side that contains in its fine surface structure faces that are inclined by at least 15.degree. with respect to the geometrically ideal surface of the wafer;
- and
- melting parts of the rear sides of said wafers by the action of light radiation so as to induce a gettering dislocation network in the surface region of the rear side of the wafers.
Dependencies are inferred from the claim text.