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US 4,536,421 AGranted
Method of forming a microscopic pattern
AssigneeHitachi, Ltd.
InventorsToshiharu Matsuzawa, Kikuo Douta, Takao Iwayanagi, Hiroshi Yanazawa
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Abstract
A negative photoresist having benzene rings is irradiated with short-wavelength ultraviolet radiation, and is developed to form a photoresist pattern whose sectional shape is an inverted trapezoid. Using the photoresist pattern, the lift-off process having heretofore required troublesome steps can be performed very easily.
Claims17
A method of forming a microscopic pattern, including:
- (1) the step of depositing a film of a negative photoresist, said photoresist including a polymer having benzene rings, said film being a single layer, on a surface on which the microscopic pattern is to be formed, to form a photoresist film of said single layer,
- (2) the step of irradiating a desired part of said photoresist film with short-wavelength ultraviolet radiation, to lower a solubility of the irradiated part,
- (3) the step of developing said photoresist film, to remove an unirradiated part thereof and to form a photoresist pattern from said photoresist film whose sectional shape is an inverted trapezoid,
- (4) the step of depositing a film of a material which is to form said microscopic pattern on the portion of said surface that is exposed by removal of said unirradiated part and on said photoresist pattern, and
- (5) the step of removing said photoresist pattern along with the film of the material deposited thereon.
2 more elements
Dependencies are inferred from the claim text.