Polysilicon thin films of improved electrical uniformity
AssigneeHarris Corporation
InventorAlan J. Kasten
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Abstract
A method for forming a polysilicon thin film semiconductor device precursor, and the precursor, are disclosed, wherein the deposited thin film layer is scanned with a continuous wave laser in a first direction, and scanned a second time in a direction different from that of the first direction. The cross-scanning reduces the anisotropy of the thin film produced by the first scanning and apparently induces larger grain size in the recrystallized polysilicon.
Claims5
A polysilicon thin film semiconductor device precursor of reduced anisotropy, comprising:
- a substrate with a polysilicon thin film deposited thereover which film has been scanned a first time by a laser beam in a first direction to produce relatively long, thin crystallites having a long axis oriented generally parallel to the direction of said first scan, and scanned a second time by a laser beam in a direction at a bias to said first direction, whereby the recrystallized crystallites of the polysilicon thin film are caused to grow in the direction of said second scanning.
A polysilicon thin film semiconductor device precursor of reduced anisotropy, produced by a process which includes scanning the precursor with a laser beam in a first direction, followed by scanning the procursor a second time in a second direction at a bias to said first direction, comprising:
- a substrate with a polysilicon thin film deposited thereover, said film comprising recrystallized crystallites having a first angle of orientation generally aligned in the direction of said first scan, and having a second angle of orientation generally aligned in the direction of said second scan.
Dependencies are inferred from the claim text.