Method for manufacturing crystalline film
AssigneeNippon Telegraph & Telephone Public Corporation
InventorsHidefumi Mori, Masahiro Ikeda
Life of this patent
Estimating the term…
Abstract
A thin film of a metal of which eutectic or compound is produced together with a semiconductor which is to be grown in its crystalline form is deposited on an amorphous (quartz glass) substrate. The thin film is patterned with a periodic pattern of a polygon having cross angles of multiples of about 60.degree., then the resulting substrate is heated at a temperature higher than the eutectic temperature of the metal and the semiconductor, and the semiconductor is deposited on the thin film under such heating condition, so that a crystalline film of the semiconductor is precipitated on the substrate. Such crystalline film is grown on a planar substrate at a low temperature of about eutectic temperature.
Claims17
A method for manufacturing a crystalline film, comprising the steps of:
- depositing a thin film of a metallic material of which a eutectic compound is produced together with a material to be crystallized, on a planar amorphous or metallic substrate;
- patterning said thin film with a periodic relief having the same rotation symmetry as the crystal axis of a crystal face which is to be grown preferentially in parallel to the plane of said planar substrate, said periodic relief exposing said planar substrate corresponding to portions of said thin film removed by the patterning;
- heating the resulting substrate on which said thin film patterned with said periodic relief is disposed at a temperature higher than the eutectic temperature of said material to be crystallized and said metallic material;
- and
- depositing said material to be crystallized on said thin film patterned with said periodic relief under the heating conditions, whereby a crystalline film is precipitated on the initial planar substrate from the euctectic alloy layer which is composed of said material to be crystallized and said metallic thin film by the above steps.
A method for manufacturing a crystalline film by growing a single-crystal thin film of a semiconductor on a planar amorphous substrate, said method comprising the steps of:
- forming a resist pattern having a desired shape on a planar amorphous substrate;
- depositing a thin film of a metal of which a eutectic compound is produced together with said semiconductor on the resulting substrate;
- patterning said thin film with a periodic pattern of a polygon or a triangle having cross angles in a shape similar to the crystal habit of the crystal of said semiconductor to be precipitated by removing said resist pattern together with the thin film thereon, said periodic pattern thereby exposing said planar amorphous substrate corresponding to the portions of said thin film removed by said patterning;
- and
- depositing a semiconductor on said thin film patterned with said periodic pattern under the heating conditions, whereby a single-crystal thin film of said semiconductor is precipitated on the initial planar substrate.
A method for manufacturing a crystalline film by growing a single-crystal thin film of a semiconductor on a planar amorphous substrate, comprising the steps of:
- deposition an initial thin film of a metal of which a eutectic compound is produced together with a semiconductor on a planar amorphous substrate;
- patterning said initial thin film with a periodic pattern of a polygon or a triangle having cross angles in a shape similar to the crystal habit of a single crystal thin film of said semiconductor to be precipitated, said periodic pattern exposing said planar amorphous substrate corresponding to portions of said initial thin film removed by the patterning;
- heating the resulting substrate on which said initial thin film patterned with said periodic pattern is disposed at a temperature higher than the eutectic temperature of said semiconductor and said metal;
- and
- depositing said semiconductor on said initial thin film patterned with said periodic pattern under the heating conditions, whereby said single crystal thin film of said semiconductor is precipitated on the initial planar substrate.
Dependencies are inferred from the claim text.