Information holding device
AssigneeQMC Industrial Research Limited
InventorEdward G. Wilson
Life of this patent
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Abstract
A memory comprises a multilayer Langmuir-Blodgett film (1) in which each layer (2) is capable of carrying a charge. A photo-injector layer (D) is located on one side of the film for introducing charges into the film in a time sequence which corresponds to the information to be carried. Voltage source (6) is provided for applying a voltage between the faces of the film to cause the charge carried by any layer to be transferred to the adjacent layer. The sequence of charges carried by the film may be read out by a photon-emitting electron arrival detector (F) on the opposite side of the film, or by a method of current differentiation. The film (1) is preferably formed of a polydiacetylene.
Claims18
A memory for carrying information comprising a multilayer Langmuir-Blodgett film in which each layer is capable of carrying a charge;
- means for introducing charges into one side of the film in a time sequence which corresponds to the information to be carried, means for applying a voltage between the faces of the film to cause the charge carried by any layer to be transferred to the adjacent layer, and means for reading out the sequence of charges carried by the film.
A memory according to any of the preceding claims wherein said means for introducing charges is arranged to do so in response to input signals representing said information in the form of pulses of photon energy.
Dependencies are inferred from the claim text.