Gallium arsenide ISL gate with punched-through bipolar driver transistor
AssigneeHandotai Kenkyu Shinkokai
InventorsJunichi Nishizawa, Tadahiro Ohmi
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Abstract
A gallium arsenide semiconductor integrated circuit having a driver transistor constructed as a normally-configured bipolar mode static induction transistor having an n.sup.+ source region provided in a main or outer surface thereof and having an n.sup.+ buried region which serves as a drain region thereof. A bipolar, an insulated gate field-effect transistor or a resistor may be employed as a load for the driver transistor. Both the driver transistor and the load are formed on a semi-insulating substrate, preferably a p-type high resistivity material. Schottky diodes may be provided at the output terminals of the driver transistor so that wired-OR and wired-NOR logic functions may be readily implemented.
Claims3
A gallium arsenide static induction transistor integrated circuit formed in a semiconductor body comprising:
- a semi-insulating substrate;
- an epitaxial layer grown on said semi-insulting substrate;
- a static induction transistor;
- and a resistor connected as a load of said static induction transistor, and resistor and said static induction transistor being formed on said epitaxial layer;
- wherein said static induction transistor comprises an n.sup.+ source region formed in contact with a main surface of said epitaxial layer;
- a p.sup.+ gate region formed in contact with said main surface of said epitaxial layer with said gate region substantially surrounding said source region;
- an n.sup.+ buried drain region adjacent to said semi-insulating substrate;
- a low impurity concentration current path region substantially surrounded by said source, gate and drain regions, said current path region including a low impurity p region adjacent to at least said source region, said current path region having dimensions and impurity concentrations so as to be completely covered with a depletion region at a zero, off-state gate bias;
- and at least one Schottky contact connected as an output terminal to said drain region;
- and
- wherein said resistor comprises a p region formed in contact with said main surface of said epitaxial region;
- and at least a semi-insulating region between said p region and said semi-insulating substrate.
Dependencies are inferred from the claim text.