Recessed interdigitated integrated capacitor
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorMax N. Yoder
Life of this patent
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Abstract
A large value capacitor having interdigitated electrodes embedded within a planar substrate of semiconductor material and a method for producing the capacitor are presented. Metallic material forming a plurality of individual electrodes is deposited within a plurality of isolated parallel spaced-apart planar recesses formed into the substrate from the planar surface by ion beam machining, etching, or the like. Alternate individual electrodes are electrically interconnected to form the interdigitated opposite electrodes of the capacitor with the dielectric comprising the high resistivity substrate material. Each of the interdigitated electrodes is connectable to other electronic members including members disposed on the same substrate.
Claims3
An integrated circuit comprising:
- a semiconductor substrate having first and second spaced apart surfaces and a resistivity of the material of the substrate being greater than 10.sup.4 ohm-centimeters;
- a first plurality of spaced apart electrodes embedded within the bulk of the substrate between the first and second surfaces;
- a second plurality of spaced apart electrodes embedded within the bulk of the substrate between the first and second surfaces, the ones of the first electrodes alternating with the ones of the second electrodes along the plane of the substrate;
- at least one electronic member formed within the substrate;
- means interconnecting the first plurality of electrodes and the electronic member and disposed proximal the first surface;
- and
- means interconnecting the second plurality of electrodes and disposed proximal the first surface;
- the first and second plurality of electrodes being metallized members forming interdigited opposite electrodes of a capacitor with a dielectric thereof being the substrate material.
Dependencies are inferred from the claim text.