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US 4,400,710 AGranted
Semiconductor device
AssigneeZaidan Hojin Handotai Kenkyu Shinkokai
InventorsJun-ichi Nishizawa, Tadahiro Ohmi, Keishiro Takahashi
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Abstract
A semiconductor device having its carrier-injecting region formed with a Schottky structure, and arranged so that the current flowing through the Schottky barrier by virtue of tunnel effect is controlled by a controlling electrode to thereby control the drain or collector or anode current. Thus, this device has a large current density and a large current gain. This device can be used not only as a discrete one, but also it is quite suitable when applied to integrated circuits.
Claims27
A semiconductor device, comprising:
- a first lightly-doped semiconductor region of a first conductivity type and having a principal surface;
- a second highly-doped semiconductor region of a second conductivity type opposite to said first conductivity type formed at said principal surface of said first semiconductor region to form a pn junction therewith and surrounding a portion of said first semiconductor region to define a current channel region therein:
- a Schottky metal electrode connected to that part of said principal surface corresponding to said current channel region of said semiconductor region;
- and
- a carrier-collecting highly-doped semiconductor region disposed adjacent to said first semiconductor region on that side of said first semiconductor region located opposite to said principal surface for extracting majority carriers injected from said Schottky metal electrode, through said channel region said second semiconductor region being responsive to forward bias signals applied thereto, said majority carriers injected from said Schottky metal electrode increasing with an increase of said forward bias voltage.
2 more elements
Dependencies are inferred from the claim text.