Technique of silicon epitaxial refill

A process of forming a plurality of epitaxial refills in thick oxide layers using a continuous flow reactor for use in producing semiconductor devices, comprising the sequential steps of:

• forming a silicon substrate for supporting said epitaxial refills;
• treating said substrate with a first standard silicon cleaning solution;
• immersing said treated substrate in a first acid;
• rinsing said acid from said substrate with distilled water;
• forming an oxide layer on said substrate, said oxide layer comprising densified silane oxide layers;
• forming a silicon nitride layer on said plurality of densified silane oxide layers;
• selectively forming a photoresist layer on said silicon nitride layer;
• etching to a predetermined depth selective areas of said photoresist layer, said silicon nitride layer, and said silane oxide layers;
• removing the remaining photoresist with an asher;
• applying a common oxide echant to the exposed silane oxide layer;
• removing the remaining silicon nitride;
• treating said etched oxide layer with a second standard silicon cleaning solution;
• immersing said treated etched oxide and substrate in a second acid;
• rinsing said second acid from said etched oxide layer and substrate with distilled water;
• and
• filling pockets formed by etching in said silane oxide layers with said refill, said refill being substantially level to the surface of said silane oxide layers.