Transverse junction stripe laser with distributed Bragg reflectors
AssigneeHoneywell Inc.
InventorHideo Kawanishi
Life of this patent
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Abstract
A solid state AlGaAs laser of the transverse junction stripe with distributed Bragg reflector type.
Claims3
A transverse junction stripe (TJS) laser having thereon a distributed Bragg reflector including a layer of GaAs comprising a heavily doped p-GaAs active region and a lightly doped n-GaAs region which acts as a low loss optical passive waveguide for laser light emitted in the heavily doped p-region, wherein the layer of GaAs is sandwiched between layers of Al.sub.x Ga.sub.1-x As, and wherein the sandwiched layers are elongated and the heavily doped p-GaAs active region is located intermediate a lightly doped n-GaAs region on either end and wherein two distributed Bragg reflectors are etched on the surface of the Al.sub.x Ga.sub.1-x As layer in the proximity of the light doped n-GaAs regions, and a pair of ohmic contacts thereon to provide for energization of the TJS laser.
A trasverse junction stripe (TJS) laser having thereon a distributed Bragg reflector including a layer of GaAs comprising a heavily doped p-GaAs active region and a lightly doped n-GaAs region which acts as a low loss optical passive waveguide for laser light emitted in the heavily doped p-region, wherein the layer of GaAs is sandwiched between layers of Al.sub.x Ga.sub.1-x As, and wherein the sandwiched layers are elongated with the heavily doped p-GaAs active region being spaced from the lightly doped n-GaAs region, wherein a distributed Bragg reflector is etched on the surface of the Al.sub.x Ga.sub.1-x As layer in the proximity of the lightly doped n-GaAs region, and wherein the sandwiched layers are cleaved at the location of the active region to provide a facet through which lasing light may output, and a pair of ohmic contacts thereon to provide for energization of the TJS laser.
A transverse junction stripe laser with distributed Bragg reflector comprising:
- a substrate of single crystal n-GaAs;
- a first layer of n-Al.sub.x Ga.sub.1-x As epitaxially grown on said substrate;
- a second layer of n-GaAs expitaxially grown on said first layer;
- a third layer of n-Al.sub.x Ga.sub.1-x As epitaxially grown on said second layer and having a surface;
- a portion of the surface area of said third layer etched to form at the surface of said third layer a distributed Bragg reflector;
- an insulating layer sputtered onto said third layer surface;
- and,
- A Zn diffused area extending downward from a window in said insulating layer through a portion of said third layer, said second layer and into said first layer thereby making a vertical p+, p, n region;
- and,
- two ohmic contacts one to the top p-Al.sub.x Ga.sub.1-x As layer and one to the bottom n-GaAs layer.
Dependencies are inferred from the claim text.