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US 4,399,015 AGranted
Method for fabricating an indium tin oxide film for a transparent electrode
AssigneeSharp Kabushiki Kaisha
InventorsYoshihiro Endo, Yoshito Yamashita, Hiroshi Kishishita, Hisashi Uede
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Abstract
A method for fabricating an indium tin oxide (ITO) film comprises depositing the ITO film on a heat-resisting substrate by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas, and heat-treating the ITO film at about 550-650 degrees Centigrade in an oxygen-free atmosphere. Preferably, the heat-resisting substrate comprises an aluminoborosilicate glass. Further, sputtering, preferably reactive sputtering, is employed.
Claims10
A method for fabricating an indium tin oxide (ITO) film, comprising:
- depositing the ITO film on a heated substrate which is heat-resistant by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas having a moderate partial pressure of oxygen;
- and
- heat-treating the ITO film at about 550.degree.-650.degree. C. in an oxygen-free atmosphere.
Dependencies are inferred from the claim text.