Method for making non-alloyed heterojunction ohmic contacts
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsRichard A. Stall, Colin E. C. Wood, Lester F. Eastman
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Abstract
Ultra low resistance heterojunction ohmic contacts to semiconductors such gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a non-alloyed heterojunction ohmic contact having a very low specific resistance.
Claims5
A method of making a non-alloyed low resistance phmic contact having specific contact resistance less than 10.sup.-7 ohm-cm.sup.2 and including a substrate of a semiconductor, a degenerately doped single crystal layer of a material having matching lattice structure to that of said semiconductor and a metallic layer which includes the steps of:
- growing the substrate of said semiconductor;
- depositing a single crystal layer of degenerately doped material having a doping density exceeding 10.sup.20 cm.sup.-3 over the substrate of said semiconductor;
- and
- evaporating the metallic layer over the single crystal layer of said degenerately doped material.
Dependencies are inferred from the claim text.