Method of making semi-amorphous semiconductor device
OwnerShunpei Yamazakiinventor
Life of this patent
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Abstract
A semi-amorphous semiconductor device manufacturing method in which a non-single crystal semiconductor layer is provided on a substrate to form therebetween a PN, PIN, PI or NI junction and a current is applied to the non-single crystal semiconductor layer to provide a semi-amorphous semiconductor layer. When the current is applied to the non-single crystal semiconductor layer, it is irradiated by light and/or heated at the same time.
Claims33
A method for the manufacture of a semi-amorphous semiconductor device, comprising the step of:
- preparing a substrate;
- forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer;
- forming at least one conductive layer on the non-single crystal semiconductor;
- and
- applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying light to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
A method for the manufacture of a semi-amorphous semiconductor device, comprising the steps of:
- preparing a substrate;
- forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer;
- forming at least one conductive layer on the non-single crystal semiconductor;
- and
- applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying heat to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
A method for the manufacture of a semi-amorphous semiconductor device, comprising the steps of:
- preparing a substrate;
- forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer;
- forming at least one conductive layer on the non-single crystal semiconductor;
- and
- applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying light and heat to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Dependencies are inferred from the claim text.