Hydrogenated amorphous silicon photoconductive layer
AssigneeCanon Kabushiki Kaisha
InventorsMasao Sugata, Masaki Fukaya, Takashi Nakagiri, Takaaki Yamagata, Yutaka Hirai
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Abstract
The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.
Claims9
A hydrogenated amorphous silicon photoconductive layer formed on a support, said layer exhibiting infrared absorption peaks at 880.+-.10 cm.sup.-1 corresponding to a normalized mode of a bending mode of an SiH.sub.2 bond and having an intensity I.sub.A and at 970.+-.10 cm.sup.-1 corresponding to the overlap of a peak of a normalized mode of a deformation mode of an SiH bond and a peak which an Si-O bond is concerned and having an intensity I.sub.B, wherein the ratio, I.sub.A /I.sub.B, is not more than 1.0.
Dependencies are inferred from the claim text.