US 4,397,714 A · System for measuring the concentration of chemical substances

Abstract

A solid state chemically sensitive integrated circuit includes three field-effect transistors (FETs) fabricated on a single semiconductor substrate. The gate of a first FET is overlaid with a chemically sensitive element that is adapted to create an electrochemical potential at the gate when exposed to selected chemical substances. This gate is also electrically connected to the source of a second FET and the drain of a third FET. The second and third FETs are used as switches to selectively connect the gate of the first FET to ground, to an external reference potential, or to isolate it from all external signals. In the latter case, only the interaction between the chemically sensitive element and external chemical substances may affect the first FET's operation thus allowing the first FET, when so isolated, to provide a measure of the chemical properties of the substance to which its chemically sensitive element is exposed. The presence of the second and third FETs allows the first FET to be protected from static shock during routine handling and when the device is not in use. They also allow the performance of the first FET to be fully characterized by permitting a controlled gate voltage to be applied to the first FET.

Claims17

Dependent claims

In a transducer system for detecting chemical properties of substances and including a semiconductor substrate having a doping polarity, a pair of spaced-apart diffusion regions located at the surface of the substrate and having doping polarity opposite that of said substrate material, an electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate lying between the diffusion regions, a chemical selective system including a chemical selective membrane disposed over at least a portion of said insulator material, and a reference electrode connected in circuit with said spaced apart diffusion regions through a potential source, the combination thereof with

an electrical conductive material disposed between the substrate and diffusion regions and the chemical selective membrane so as to be located above at least a portion of the substrate which is between the diffusion regions,
a first switch element coupled to the conductive material and operable to selectively connect the conductive material to a voltage source, and
a second switch element coupled to the conductive material and operable to selectively connect the conductive material to a ground potential source.

Apparatus for measuring the concentration of chemical substances comprising:

a semiconductor substrate having a doping polarity;
a pair of spaced-apart diffusion regions located at the surface of said substrate material and connected along the surface by a connecting layer region, said regions having a doping polarity opposite that of said substrate material;
a conductive Schottky barrier gate layer overlying at least a portion of said connecting layer region;
a reference electrode coupled in circuit relationship with said diffusion regions through a reference potential source;
switch means for electrically connecting the Schottky barrier gate layer selectively to a voltage source or to a ground potential source;
and
a layer of chemical sensitive material overlying said Schottky barrier gate layer, said chemical sensitive material being adapted to create an electrochemical voltage when exposed to selected chemical substance and to apply said electrochemical voltage at said Schottky barrier gate layer, said electrochemical voltage being referenced through said reference electrode to said diffusion regions.

4 more elements

A monolithic integrated circuit for measuring the concentration of chemical substances comprising:

a semiconductor substrate having a doping polarity;
a first pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;
a second pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;
a third pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;
means electrically connecting a first region of the second pair of diffusion regions to a first region of the third pair of diffusion regions;
electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate material lying between said first, second and third pairs of diffusion regions;
a first conductive layer overlying that portion of said electrical insulator material that lies over the substrate surface area between said first pair of spaced-apart diffusion regions, said first conductive layer being in electrical contact with said connecting means;
a second conductive layer overlying that portion of said electrical insulator material that lies over the substrate surface area between said second pair of spaced-apart diffusion regions;
a third conductive layer overlying that portion of said electrical insulator material that lies over the substrate surface area between said third pair of spaced-apart diffusion regions;
a chemical sensitive element positioned above said first conductive layer, said chemically sensitive element being adapted to create an electrochemical potential when exposed to selected chemical substances;
and
a reference electrode connected in circuit relationship with said first pair of spaced-apart diffusion regions through a potential source such that a potential is created and added to said electrochemical potential generated in said chemically sensitive element, thereby creating a composite electric field that is felt at said first conductive layer, said composite electric field thus serving to affect the conductivity between said first pair of diffusion regions.

9 more elements

A method of measuring the concentration of chemical substances using three field-effect transistors (FETs), each having source, drain, and gate terminals, and a first of which further has a chemically sensitive element overlying its gate region, said method comprising:

(a) connecting the three FETs in circuit relationship as follows:
(1) electrically connecting the gate of the first FET to the source terminal of a second FET and the drain terminal of a third FET,
(2) grounding the source terminals of the first and third FETs,
(3) connecting an external potential source between ground and the drain terminal of the second FET,
(4) connecting an external potential source between ground and the drain terminal of the first FET, and
(5) connecting a current measuring device in series with the first FET so as to measure the amount of current that flows between the source and drain terminals thereof;
(b) exposing said chemically sensitive element of said first FET to a substance in which the concentration of chemical substances is to be measured;
(c) placing a reference electrode in contact with said substance whose concentration of chemical substances is to be measured, said reference electrode being connected to an external potential source that is referenced to ground;
(d) biasing the gate terminals of said second and third FETs so that they both act as switches, with the third FET being biased ON and the second FET being biased OFF, thereby applying a ground potential through the third FET to the gate terminal of the first FET;
(e) maintaining said third FET in the ON condition and said second FET in the OFF condition until a measurement is to be made, thereby protecting said first FET from static electric charge during manufacture, routine handling, and when not in use;
(f) biasing the gate terminals of said second and third FETs so that the third FET is OFF and the second FET is ON whenever the electrical characteristics of the first FET are to be measured, said biasing causing whatever reference potential is present at the drain terminal of said second FET as applied in step (a) (3) above to be directed through the second FET to the gate terminal of the first FET, said fixed gate potential thereby preventing any variations in the gate potential of the first FET that might otherwise occur due to the creation of an electrochemical potential by the chemically sensitive layer;
(g) biasing the gate terminals of said second and third FETs so that both FETs are OFF when a measurement of the concentration of chemical substances is to be made, thereby isolating the gate terminal of said first FET from all external potentials and allowing said electrochemical potential generated by said chemically sensitive element, and referenced to said first FET through the reference electrode mentioned in step (e), to vary the gate potential of the first FET in proportion to the concentration of selected chemical substances to which said chemically sensitive element is exposed, said variation affecting the conductivity between the source and drain terminals of the first FET;
and
(h) measuring the current that flows between the source and drain terminals of the first FET, said measure of current representing a measure of the concentration of chemical substances to which the first FET is exposed.

11 more elements

Dependencies are inferred from the claim text.

System for measuring the concentration of chemical substances

Life of this patent

System for measuring the concentration of chemical substances

Life of this patent

Abstract

Claims17