Compact MOSFET device with reduced plurality of wire contacts

A semiconductor device comprising a first transistor having active elements which in turn comprise:

• a semiconductor substrate of a first conductivity type having at least one surface,
• an insulating thin film over the surface of said semiconductor substrate,
• a gate region of a second conductivity type within said substrate and having a surface contiguous with at least a portion of the surface of said substrate,
• a semiconductor layer over the insulating thin film, and
• a source region and a drain region formed in said semiconductor layer over said gate region with said insulating thin film interposed between said source and drain regions and said gate region to allow said source and drain regions to at least partially overlap said gate region;
• and
• a second transistor having active elements which in turn comprise:
• a source or drain region in the surface of said semiconductor substrate, and
• a gate region formed in said semiconductor layer above said insulating thin film of said first transistor;
• wherein the gate of one of said first and second transistors and at least one of the source or drain regions of the other of the first and second transistors are formed integrally with each other.

A semiconductor device comprising a first transistor having active elements which in turn comprise:

• a semiconductor substrate of a first conductivity type having at least one surface,
• an insulating thin film over the surface of said semiconductor substrate,
• a semiconductor layer over the insulating thin film,
• a gate region of a second conductivity type within said substrate and contiguous with the surface of said substrate, and
• a source region and a drain region formed in said semiconductor layer over said gate region with said insulating thin film interposed between said source and drain regions and said gate region to allow said source and drain regions to at least partially overlap said gate region;
• and
• a second transistor having active elements which in turn comprise:
• source and drain regions in the surface of said semiconductor substrate, and
• a gate in said semiconductor layer over said insulating thin film of said first transistor;
• when the gate of one of said first and second transistors and at least one of the source and drain regions of the other of the first and second transistors are formed integrally with each other.