Gallium nitride light-emitting element and method of manufacturing the same

A light-emitting diode chip comprising:

• (a) a single crystal substrate having an insulating film at a given position in one surface thereof;
• (b) a conductive gallium nitride layer formed on said surface of said substrate;
• (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity;
• (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conconductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth;
• and
• (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer.

A light-emitting diode chip comprising:

• (a) a single crystal substrate having a rough area at a given position in one surface thereof;
• (b) a conductive gallium nitride layer formed on said surface of said substrate;
• (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity;
• (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth;
• (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer;
• and
• (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrode.

A light-emittng diode chip comprising:

• (a) a single crystal substrate having an insulating film at a given position in one surface thereof;
• (b) a conductive gallium nitride layer formed on said surface of said substrate;
• (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity;
• (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium layer being formed by a single epitaxial growth;
• (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer;
• and
• (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrodes.