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US 4,396,899 AGranted
Platinum thin film resistance element and production method therefor
AssigneeThe Kirk Corporation
InventorYoshio Ohno
Life of this patent
Estimating the term…
Abstract
A platinum thin film is formed by sputtering platinum onto an insulating substrate and heat aging the platinum thin film in a stairstep manner. A kerf is formed in the platinum thin film to produce a desired resistance, and a metal oxide semiconductor film is thereafter deposited on the platinum thin film to produce a gas sensor.
Claims10
A gas sensor comprising a platinum thin film resistance element which includes:
- an insulating substrate having a smooth surface the unevenness of which is less than 1.1 .mu.m;
- a substantially pure platinum thin film formed as a continuous, solid film to a thickness of 100 to 1000 A on said surface of the insulating substrate, the resistance value of said thin film being stabilized by sputtering platinum particles forming said film onto said surface and by thereafter heat aging said film at temperatures from about 100.degree. C. to about 1000.degree. C. in a step-wise manner, said film having a kerf formed therein to increase its resistance value;
- a metal oxide semiconductor film formed on the platinum thin film to adsorb a gas to be sensed;
- and
- a pair of lead wires electrically connected to opposite end portions of the platinum thin film and fixed to the insulating substrate.
2 more elements
Dependencies are inferred from the claim text.