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US 4,396,704 AGranted
Solid state devices produced by organometallic plasma developed resists
AssigneeBell Telephone Laboratories, Incorporated
InventorGary N. Taylor
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AssigneeBell Telephone Laboratories, Incorporated
InventorGary N. Taylor
Estimating the term…
Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.
In a method of producing a solid state device including at least one pattern delineation step by steps comprising:
Dependencies are inferred from the claim text.