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US 4,396,460 AGranted
Method of forming groove isolation in a semiconductor device
AssigneeHitachi, Ltd.
InventorsYoichi Tamaki, Tokuo Kure, Takeo Shiba, Hisayuki Higuchi
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Abstract
After filling grooves with a filling material, this filling material is etched by the use of a double-layer film which is made of substances different from each other. The side etching of the lower film of the double-layer film and the etching of the filling material are alternately performed in such a manner that each etching is carried out a plurality of number of times. Thus, the upper surface of the filling material contained in each groove can be flattened.
Claims9
A method of manufacturing a semiconductor device, comprising the steps of:
- (1) forming a groove in a major surface of a semiconductor substrate,
- (2) depositing a filling material on the whole surface of the resultant substrate to fill said groove,
- (3) forming two superimposed films made of materials different from each other and the filling material, on the whole surface of the resultant substrate,
- (4) forming a resist pattern on parts of said two films overlying said groove,
- (5) etching and removing exposed parts of said two films by employing said resist pattern as a mask,
- (6) side-etching the lower one of said two films partially beneath the upper film,
- (7) partially etching said filling material employing the lower film as a mask, and
- (8) performing each of the steps (6) and (7) at least once more, to thereby remove the filling material existing outside said grooves.
5 more elements
Dependencies are inferred from the claim text.