Reduction of leakage current in InGaAs diodes
AssigneeBell Telephone Laboratories, Incorporated
InventorsHans J. Lewerenz, Hans J. Stocker
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Abstract
The reverse leakage current of InGaAs diodes, in particular the dark current of In.sub.0.53 Ga.sub.0.47 As photodiodes, is reduced by a treatment in a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O where 10.ltoreq..times..ltoreq.100 approximately.
Claims5
A method of reducing the leakage current of an InGaAs diode by subjecting said diode to a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O, where 10.ltoreq.X.ltoreq.100 approximately.
A method of reducing the leakage current of an InGaAs diode by subjecting said diode to a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O where X is chosen so as to produce an overlayer which is essentially impervious to etching in HF.
A method of reducing the dark current of a photodiode comprising the steps of
- providing an InP body,
- epitaxially growing at least one layer of In.sub.0.53 Ga.sub.0.47 As on said substrate,
- forming a p-n junction in said at least one layer,
- subjecting said photodiode to a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O, where 10.ltoreq.X.ltoreq.100.
Dependencies are inferred from the claim text.