US 4,395,981 AGranted

Magneto-semiconductor ignition system

AssigneeRobert Bosch GmbH

InventorsJiri Podrapsky, Josef Orova

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Abstract

To suppress negative half-waves derived from a magneto armature and not used for ignition without use of external damping networks, the semiconductor switch controlling current flow, and abrupt turn-off to initiate an ignition event, is formed as a monolithic semiconductor element, and the inherent inverse diode of the monolithic element is utilized to pass the reverse voltage half-waves. To prevent damage to the inherent diodes due to over-voltage or current overloading, a damping resistance element is connected in series with the main current carrying path of the monolithic circuit elements, preferably a Darlington transistor, which, preferably, is a semiconductor resistor having a preferred current passage characteristic in the same direction as the current flow through the Darlington transistor, for example a Zener diode, a resistor, or a series of diodes polarized like the inverse diode, bridged by a diode conducting in the same direction as the Darlington transistor, or the like.

Claims2

Dependent claims

Internal combustion engine magneto ignition system for a spark gap having

a magneto generator (10) to generate ignition energy, including a magnet system (13) coupled to rotate with the engine and an induction coil (12b) in magnetically coupled relation to the magnet to furnish alternating voltage for conversion to a high voltage pulse to form an ignition pulse for the spark gap (14);
a semiconductor switch (16) and an inherent inverse diode (18) comprising a single monolithic integrated circuit element, the semiconductor switch having its main switching path connected to the induction coil and forming a primary circuit with;
control circuit means (19, 20, 22, 25) connected to the induction coil and to the controlled semiconductor switch and controlling said switch to change from conductive to nonconductive state, and thereby generate the ignition pulse;
and a Zener diode (17, 17a) connected in series with the main switching path of the controlled semiconductor switch (16) in the primary circuit to remove high voltage conditions from the inherent inverse diode (18) during half-waves derived from the induction coil which are of a polarity causing conduction from the inverse diode and permits conduction of the inverse diode only after the breakdown voltage of the Zener diode has been exceeded to form a damping resistance circuit for the inverse diode.

1 more element

Dependencies are inferred from the claim text.