Barrier-free, low-resistant electrical contact on III-V semiconductor material
AssigneeSiemens Aktiengesellschaft
InventorChristl Lauterbach
Life of this patent
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Abstract
A contact structure on indium-containing III-V semiconductor material is comprised of a four layer sequence consisting of an indium layer in direct contact with the semiconductor material, a zinc layer in contact with the indium layer, a chromium-nickel or chromium or palladium or platinum layer in contact with the zinc layer and a gold layer for external contacting with a lead. An exemplary embodiment of such contact structure exhibits specific contact resistance ranging between about 10.sup.-4 and 10.sup.-5 ohm.multidot. cm.sup.2.
Claims10
A barrier-free, low-resistance contact structure for semiconductor components based on indium-containing III-V semiconductor material, comprising:
- a plurality of layers positioned on one another in a layer sequence on a select area of said semiconductor component,
- with a first layer of said sequence being in direct contact with said semiconductor material and consisting of indium;
- with a second layer of said sequence being in direct contact with said first layer and being composed of a material having a p-doping effect in said semiconductor material;
- with an uppermost layer of said sequence being composed of a metal available for external contact of said semiconductor component;
- said layer sequence being subjected to a common thermal treatment;
- and
- with a third layer being positioned in the layer sequence between said second layer and said uppermost layer, said third layer being composed of a material selected from the group consisting of platinum, palladium, chromium and a chromium-nickel alloy.
Dependencies are inferred from the claim text.