Transparent conductive film having areas of high and low resistivity
AssigneeRCA Corporation
InventorsJohn L. Vossen, Jr., Joseph Zelez
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Abstract
A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.
Claims8
A method of producing areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide comprising ion implanting protrons into a portion of said film and annealing the film in a reducing gas at a temperature above about 700.degree. C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.
A method of forming a transparent conductive layer having areas of high and low resistivity on a substrate comprising depositing a film of indium oxide and zirconium oxide on said substrate, ion implanting protons into a portion of said film and annealing the film in reducing gas at a temperature above about 700.degree. C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.
Dependencies are inferred from the claim text.