Photoconductive member with .alpha.-Si(N) barrier layer
AssigneeCanon Kabushiki Kaisha
InventorsIsamu Shimizu, Shigeru Shirai, Eiichi Inoue
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AssigneeCanon Kabushiki Kaisha
InventorsIsamu Shimizu, Shigeru Shirai, Eiichi Inoue
Estimating the term…
A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.
A photoconductive member comprising:
A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing at least one of hydrogen atoms and halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements and wherein said intermediate layer is non-photoconductive in the visible light region and is from 30 to 1,000 Angstroms in thickness.
A photoconductive member according to claim 59, wherein said element in Group V-A of the periodic table is selected from N, P, As, Sb and Bi.
A photoconductive member according to claim 62, wherein said p-type impurity is an element in Group III-A of the periodic table.
A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and a non-photoconductive layer in the visible light region constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements in contact with said photoconductive layer, wherein the non-photoconductive layer is from 30 to 1,000 Angstroms in thickness.
Dependencies are inferred from the claim text.