Loading patent…
AssigneeFujitsu Limited
InventorsYoshimi Shioya, Mamoru Maeda, Kanetake Takasaki, Mikio Takagi
Estimating the term…
A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate comprising the step of exposing the substrate to a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3, said deposition being effected under conditions such that the reaction gas mixture has a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) which is greater than or equal to 50 and a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) which is less than or equal to 0.08.
A method of depositing a phosphosilicate glass film on a substrate, comprising the steps of:
Dependencies are inferred from the claim text.