Semiconductor devices and method of manufacturing the same
AssigneeNippon Telegraph & Telephone Public Corporation
InventorKazuo Imai
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Abstract
In a semiconductor device of the type comprising a semiconductor substrate made of P type silicon, a P type monocrystalline silicon region formed on the major surface of the substrate and containing a P type impurity, and a porous silicon oxide region surrounding the P type silicon region, the porous silicon oxide region is made to contact all side surfaces of the P type silicon region and all or at least a portion of the bottom surface thereof.
Claims11
A method of manufacturing a semiconductor device comprising the steps of selectively implanting proton ions into a principal surface of a P type monocrystalline silicon substrate;
- heating said silicon substrate to form an N type monocrystalline silicon region;
- anodizing said substrate to form a porous silicon region extending in a thickness direction from the major surface of said P type monocrystalline substrate except said N type silicon region, said porous silicon region being formed to contact with all side surfaces and at least a portion of a bottom surface of said N type silicon region;
- and
- thermally oxidizing said porous silicon region for converting the same into a porous silicon oxide region while at the same time converting said N type silicon region into a P type silicon region.
Dependencies are inferred from the claim text.