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AssigneeBell Telephone Laboratories, Incorporated
InventorsRobert J. Collier, Michael G. R. Thomson
Estimating the term…
For a given resolution or address dimension, the pattern-writing speed of an electron beam exposure system is increased by utilizing a new mode of raster scanning. In the new mode, the writing spot dimensions of the electron beam are varied rapidly during the scan. In an electron column designed for variable-spot raster scanning, an illuminated aperture is demagnified to form the writing spot. By imaging a first aperture upon a second aperture and rapidly deflecting the image of the first aperture, the portion of the second aperture that is illuminated by the electron beam is altered. In that way, the spot size is selectively varied in a high-speed way during the raster scanning process.
A method for achieving variable-spot-size scanning of an electron beam in a lithographic exposure system adapted to fabricate microminiature devices, said method comprising the steps of
A method of fabricating microminiature devices by scanning a charged-particle beam over the surface of a planar charged-particle-sensitive layer to irradiate variable-spot-size portions of said surface positioned at address locations along plural spaced-apart scan lines, said method comprising the steps of
Apparatus for scanning a variable-spot-size electron beam over a work surface to irradiate selected portions of the surface, said apparatus comprising
A method of projecting a beam of charged particles to a target through two apertured marks which comprises directing a beam of charged particles on the first of said masks, passing said beam through the aperture of said first mask to establish a beam cross-section corresponding to the contour of said first mask aperture, deflecting said beam, after passing through the first of said masks and before passing through the second of said masks, in a transverse direction and by a given distance with respect to said second aperture, focusing the deflected beam on the second of said masks, passing only a portion of said beam through the aperture of said second mask to modify the cross-section of said beam in accordance with the contour of said second mask aperture and the direction and distance of said deflection to thereby establish by the combined interceptive action of said masks a predetermined beam cross-section at the incidence of the beam on the target.
In an apparatus for projecting a beam of charged particles to a target through two apertured masks, means operable to direct a beam of charged particles upon the first of said masks and to pass said beam through the aperture of said first mask to establish a beam cross-section corresponding to the contour of said first mask aperture, deflector means positioned to deflect said beam, after passing through the first of said masks and before passing through the second of said masks, said deflector means deflecting said beam with respect to said second aperture in a transverse direction and by a given distance to pass through a predetermined region of a transverse two-dimensional plane, lens means operable to focus the deflected beam upon the second of said masks and to pass only a portion of said beam through the aperture of said second mask to modify the cross-section of said beam in accordance with the contour of said second mask aperture and the distance and direction of said deflection to thereby establish by the combined interceptive action of said masks a predetermined beam cross-section at the incidence of the beam on the target.
An electron beam exposure system comprising a source for emitting an electron beam;
An electron beam exposure system comprising a source for emitting an electron beam;
An electron beam exposure system comprising a source for emitting an electron beam;
An electron beam exposure system comprising a source for emitting an electron beam;
An electron beam exposure method for projecting an electron beam having a selectable cross section onto a workpiece, said method comprising the steps for:
Dependencies are inferred from the claim text.