Evaporation device

An apparatus wherein a film consisting of a compound presenting a semiconductor characteristics or a solid solution thereof is deposited on a substrate in an atmosphere of an atomic state gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas with a partial pressure of 1.times.10.sup.-3 Torr or less said apparatus comprising:

• a vacuum container having a gas introduction path for introducing a gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas to said vacuum container and a gas exhaust path connected to a gas exhausting equipment for controlling a gas pressure and a vacuum condition in said vacuum container,
• a discharging means disposed in said vacuum container and having a cathode with a heating power source and an anode to which a voltage is applied with respect to said cathode for producing said atomic state gas by activating said gas by a discharge between said cathode and said anode,
• an evaporation source disposed in said vacuum container for accommodating evaporation material and having an evaporation heater for heating said evaporation material,
• a hot wall disposed in said vacuum container and having a hollow cylindrical body having a lower end opening for receiving a vapor evaporated from said evaporation source, an upper end opening being opposite to said lower end opening in a direction apart from said evaporation source, and an inner surface at least on which a resistive film is deposited so that the resistive film is heated by an electric power supplied across both ends of said resistive film, and
• a substrate mounting member for mounting said substrate on said upper end opening of said hot wall on which said vapor evaporated from said evaporation source is deposited.