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US 4,392,153 AGranted
Cooled semiconductor power module including structured strain buffers without dry interfaces
AssigneeGeneral Electric Company
InventorsHomer H. Glascock, II, Douglas E. Houston, Michael H. McLaughlin, Harold F. Webster
Life of this patent
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Abstract
A semiconductor electronic device operates at high power levels using structured copper to reduce generation of stress between the elements of the device during thermal cycling in the course of normal operation. Structured copper strain buffers are used to attach each side of a silicon wafer to fluid cooled heat sinks to provide efficient removal of heat generated by the device and good electrical connection to the silicon wafer.
Claims23
A cooled electronic semiconductor device for operation at high power levels with reduced internal stress comprising:
- a silicon wafer with at least first and second electrodes on opposite sides of said wafer;
- a first metallic layer atop said first electrode and joined thereto;
- a second metallic layer atop said first metallic layer and joined thereto;
- a first structured copper strain buffer including a bundle of substantially parallel closely packed strands of copper of substantially equal length, said first strain buffer having first and second opposed surfaces, one common end of said strands being thermo-compression diffusion bonded to a first metallic sheet so as to form said first opposed surface, the remaining second opposed surface of said first strain buffer being thermo-compression diffusion bonded to said second metallic layer;
- first metallic heat sinking means for providing cooling of said device thermo-compression diffusion bonded to said first metallic sheet;
- a third metallic layer below said second electrode and joined thereto;
- a fourth metallic layer below said third metallic layer and joined thereto;
- a second structured copper strain buffer including a bundle of substantially parallel, closely packed, strands of copper of substantially equal length, said second strain buffer having third and fourth opposed surfaces, one common end of said strands being thermo-compression diffusion bonded to a second metallic sheet so as to form said fourth opposed surface, the remaining third opposed surface of said second strain buffer being thermo-compression diffusion bonded to said fourth metallic layer;
- and
- second metallic heat sinking means for providing cooling of said device thermo-compression diffusion bonded to said second metallic sheet.
7 more elements
A cooled electronic semiconductor device for operation at high power levels with reduced internal stress comprising:
- a silicon wafer with at least first and second electrodes on opposite sides thereof;
- a first metalic layer atop said first electrode and joined thereto;
- a second metallic layer atop said first metallic layer and joined thereto;
- a first structured copper strain buffer including a bundle of substantially parallel, closely packed, strands of copper of substantially equal length, said first strain buffer having first and second opposed surfaces, one common end of said strands being thermo-compression diffusion bonded to a first metallic sheet so as to form said first opposed surface, the remaining second opposed surface of said first strain buffer being thermo-compression diffusion bonded to said second metallic layer;
- first metallic heat sinking means for providing cooling of said device thermo-compression diffusion bonded into said first metallic sheet;
- a metallic support plate situated below the second electrode of said silicon wafer and operatively joined thereto;
- a third metallic layer below said support plate and joined thereto;
- a fourth metallic layer below said third metallic layer and joined thereto;
- a second structured copper strain buffer including a bundle of substantially parallel, closely packed, strands of copper of substantially equal length, said second strain buffer having third and fourth opposed surfaces, one common end of said strands being thermo-compression diffusion bonded to a second metallic sheet so as to form said fourth opposed surface, the remaining third opposed surface of said second strain buffer being thermo-compression diffusion bonded to said fourth metallic layer;
- and
- second metallic heat sinking means for providing cooling of said device thermo-compression diffusion bonded into said second metallic sheet.
8 more elements
A cooled semiconductor device for operation of high power levels with reduced internal stress comprising:
- a silicon wafer with at least first and second electrodes on opposite sides of said wafer;
- a first metallic layer atop said first electrode and joined thereto;
- a second metallic layer atop said first metallic layer and joined thereto;
- a structured copper strain buffer including a bundle of substantially parallel, closely packed, strands of copper of substantially equal length, said strain buffer having first and second opposed surfaces, one common end of said strands being thermo-compression diffusion bonded to a first metallic sheet so as to form said first opposed surface, the remaining second opposed surface of said strain buffer being thermo-compression diffusion bonded to said second metallic layer;
- metallic heat sinking means for providing cooling of said device thermo-compression diffusion bonded to said first metallic sheet;
- and
- electrical contact means for making electrical connection to said device operatively connected to each electrode on the side of said wafer including said second electrode.
4 more elements
A cooled semiconductor device for operation at high power levels with reduced internal stress comprising:
- a first metallic layer atop said first electrode and joined thereto;
- a second metallic layer atop said second electrode and joined thereto;
- a structured copper strain buffer including a bundle of substantially parallel, closely packed, strands of copper of substantially equal length, said strain buffer having first and second opposed surfaces, one common end of said strands being thermo-compression diffusion bonded to a first metallic sheet so as to form said first opposed surface, the remaining second opposed surface of said strain buffer being thermo-compression diffusion bonded to said second metallic layer;
- metallic heat sinking means for providing cooling of said device thermo-compression diffusion bonded to said first metallic sheet;
- a metallic support plate situated below the second electrode of said silicon wafer and operatively joined thereto;
- and
- electrical contact means for making electrical connection to said device operatively connected to said metallic support plate.
4 more elements
Dependencies are inferred from the claim text.