Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier

Abstract

A solid state image sensing array has a plurality of imaging sensing elements comprising first and second charge coupled MOS capacitors and a floating gate FET. The floating gate of the FET is disposed beneath the electrode of the second capacitor. In operation, a potential well is formed under the first capacitor. When the element is exposed to radiation, photochargers are accumulated in the potential well. To readout the photocharge, the charge is shifted under the second capacitor, thereby modulating the conductivity of the floating gate FET to provide signal sensing and amplification at the image sensing element. After readout, the photocharge can be purged from the sensing element by removing the potential from both capacitors, or if nondestructive readout is desired, the photocharge can be shifted back under the first capacitor.

Dependencies are inferred from the claim text.