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US 4,383,268 AGranted
High-current, high-voltage semiconductor devices having a metallurgical grade substrate
AssigneeRCA Corporation
InventorsRamon U. Martinelli, Norbert W. Brackelmanns, Paul H. Robinson
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Abstract
A high-current, high-voltage semiconductor device is fabricated on a metallurgical grade substrate of a first conductivity type by first growing an epitaxial layer of the first conductivity type on the substrate and then fabricating a semiconductor device thereon designed for high-current, high-voltage applications.
Claims4
A power semiconductor transistor, comprising:
- a substrate comprising upgraded metallurgical grade silicon of a first conductivity type;
- a first silicon epitaxial layer disposed on said substrate and having said first conductivity type;
- said first epitaxial layer and said substrate having an interface therebetween;
- a second silicon epitaxial layer, of second conductivity type, disposed on said first layer;
- a diffused region, of first conductivity type, extending into the second epitaxial layer from the surface thereof;
- said transistor having a nominal current rating at which a current density of at least 10 amperes per cm.sup.2 crosses said interface when the transistor is conducting a current equal to its nominal current rating.
3 more elements
Dependencies are inferred from the claim text.