Method of manufacturing a semiconductor device
AssigneeU.S. Philips Corporation
InventorsFranciscus H. M. Sanders, Jozef A. M. Sanders, Jan Dieleman
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Abstract
A method of manufacturing a semiconductor device where a layer which is present on a substrate and which is locally covered with an organic lacquer layer is etched by bringing the layer into contact with constituents of a plasma which is formed in a gas mixture containing a halogen compound and an oxygen compound. The rate at which the organic lacquer layer is removed by the constituents of the plasma is substantially reduced by the addition of from 1 to 15% by vol. of CO to this gas mixture.
Claims7
In a method of manufacturing a semiconductor device comprising the steps of forming a layer on a substrate, locally covering said layer with an organic lacquer layer, and plasma etching said layer, the improvement comprising forming a plasma of a gas mixture having a composition of an oxygen compound, a halogen compound, and from 1 to 15% by volume of CO.
Dependencies are inferred from the claim text.