Method of fabricating a misaligned, composite electrical contact on a semiconductor substrate
AssigneeBurroughs Corporation
InventorsPaul D. Reynolds, Norman W. Jones
Life of this patent
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Abstract
Disclosed is a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is doped opposite thereto. The method includes the steps of forming the combination of a silicide of a noble metal at the surface of the region, a layer of a barrier metal over the silicide, and a patterned conductor on a portion of the barrier metal layer which partly covers the region; etching partway through the portion of the barrier metal which is not covered by the patterned conductor; and thereafter oxidizing to completion, the portion of the barrier metal layer which is not covered by the patterned conductor and which remains after the etching step.
Claims12
A method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is exposed through an opening in an insulating layer that overlies said surface;
- said method including the steps of:
- forming the combination of a silicide of a noble metal throughout the exposed surface of said region, a layer of a barrier metal over said silicide and said insulating layer, and a patterned conductor on a portion of said barrier metal layer;
- said patterned conductor being in misalignment with said opening such that it covers only part of said silicide and an adjacent portion of said insulating layer;
- etching partway through the portion of said barrier metal layer which is not covered by said patterned conductor;
- and thereafter
- oxidizing the portion of said barrier metal layer which is not covered by said patterned conductor and which remains after said etching step.
In a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is exposed through a rectangular opening in an insulating layer that overlies said surface;
- the improvement comprising the steps of forming a silicide of a noble metal throughout the exposed surface of said region;
- thereafter forming a layer of a barrier metal over said silicide and said insulating layer;
- thereafter forming a patterned conductor on a portion of said barrier metal layer, said patterned conductor being of substantially the same width as said opening and in misalignment with it as to cover only part of said exposed region and an adjacent portion of said insulating layer;
- and thereafter oxidizing at least a portion of said barrier metal layer which is not covered by said patterned conductor.
Dependencies are inferred from the claim text.