Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation
AssigneeBell Telephone Laboratories, Incorporated
InventorsRobert C. Frye, Harry J. Leamy
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Abstract
Dielectrically isolated areas of single crystalline silicon suitable for use in device applications have been produced utilizing a particular processing sequence. This sequence first involves producing an area of porous silicon on a silicon substrate. A single crystal region of silicon is then formed on the porous silicon through procedures such as molecular beam epitaxy, chemical vapor deposition or laser fusion. The region of the porous silicon under the single crystal silicon is then oxidized in a specifically controlled manner to form an insulator.
Claims11
A process for producing a vertically isolated region of single crystal silicon comprising the steps of (1) forming a region of porous silicon that is larger in area than said region of single crystal silicon, (2) forming said region of single crystal silicon within the boundaries of said region of porous silicon such that said region of single crystal silicon overlies a section of said region of porous silicon and (3) subjecting said section to oxidation to produce said vertical isolation wherein said section has a density which varies less than 10 percent over its area and to a depth of at least 1000 A.
Dependencies are inferred from the claim text.