Method of preparing semiconductor surfaces

A method of treating a semiconductor surface comprising the steps pretreating said surface, said semiconductor being selected from the group consisting of Si, Ge, Ga-Group V compounds, and In-Group V compounds, chemomechanically polishing said surface with a mixture of a halogen and an organic solvent, said mixture consists essentially of bromine and methanol, said polishing step comprises diluting said bromine-methanol mixture from 0.05 volume percent bromine to pure methanol, and stripping residual layers.