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US 4,380,115 AGranted
Method of making a semiconductor device with a seal
AssigneeSolid State Scientific Corporation
InventorLouis N. Pomante
Life of this patent
Estimating the term…
Abstract
A seal for a semiconductor device in which the semiconductor has a major surface with a metal layer overlying the major surface. An insulating layer of glass is formed on the metal layer and a passive sealing silicon layer is formed on the glass layer for protecting the device from contamination.
Claims11
A method of fabricating a semiconductor device comprising the steps of:
- (a) forming a layer of metal overlying a major surface of a semiconductor body, and removing parts of said metal layer to leave a pattern thereof overlying said semi-conductor surface,
- (b) forming an insulating passivating layer of silicon dioxide overlying and contacting said patterned metal layer,
- (c) forming a passive sealing silicon layer overlying and contacting the insulating layer by placing said semi-conductor device with said patterned metal layer and insulating layer formed thereon in a chamber containing an atmosphere including a gas which decomposes and deposits silicon at a temperature below 525.degree. C. for a time duration sufficient to form a deposit of silicon in the range of 500 to 3000 A thick approximately, and
- (d) etching windows in the sealing silicon layer and insulating layer to provide openings to receive terminal connections to said metal layer.
1 more element
A method of fabricating a seal for a semiconductor device having an electrical circuit thereon, said device including:
- a patterned layer of metal overlying a major surface of said semiconductor body, said patterned metal layer comprising an active, conductive element of said circuit,
- said device further including a passivation layer overlying the patterned layer of metal,
- said method comprising placing said semiconductor device with said metal layer and passivation layer thereon in a chamber containing an atmosphere including silane at a temperature range of 425.degree. C. to 525.degree. C. to deposit, by thermal decomposition of said silane, a silicon layer overlying said passivating layer, said deposited silicon layer being adapted to be passive and inactive in the electrical circuit or field shielding function of the semiconductor device and effective as a seal to preclude intrusion of contaminants into said device.
Dependencies are inferred from the claim text.