Active high frequency semiconductor device with integral waveguide
AssigneeTRW Inc.
InventorsLloyd T. Yuan, Yu-Wen Chang, Thomas G. Mills
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Abstract
An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.
Claims14
A monolithic semiconductor device capable of operation at extremely high frequencies, said device comprising:
- a substrate that serves as a waveguide as well as a substrate;
- a metallic layer on said substrate having a recess opening toward said substrate and defining a cavity and a contact portion extending across said recess;
- an active high-frequency semiconductor device within said cavity between and in contact with said substrate and said contact portion including a first semiconductor layer on said substrate extending across said cavity beyond said contact portion and a second semiconductor layer in contact with said contact portion;
- and
- conductor means on said substrate within said recess and contacting said first semiconductor layer for supplying power to said device.
A monolithic Gunn effect device capable of operation at extremely high frequencies, said device comprising:
- a semi-insulating substrate that serves as a waveguide as well as a substrate;
- a Gunn effect device formed integrally on a surface of said substrate, said Gunn effect device having a plurality of semiconductive layers and an adjacent semiconductive cavity region;
- a metalized layer covering a large proportion of one face of said substrate and contacting said Gunn effect device to provide a heat sink and an electrical contact therewith;
- and
- a bias-current conductive strip formed adjacent said substrate and having a portion in contact with one of said semiconductive layers to provide electrical contact with said Gunn effect device;
- whereby radio-frequency energy is propagated out of said cavity region and into said substrate acting as a waveguide.
Dependencies are inferred from the claim text.