Method of manufacturing single crystals
AssigneeU.S. Philips Corporation
InventorsJohannes P. M. Damen, Theodorus J. Berben
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Abstract
A method of manufacturing a single crystal of a composite oxide by gradual solidification of a melt with solidification starting from a seed crystal which initially is in contact with the melt, is provided wherein to obtain a single crystal having a composition which is as homogeneous as possible (homogeneous within 1 mol. %) the following measures are taken: first, initially the melt consists of no more than 25% by weight of the single crystal to be grown; and second, during the solidification process molten material is added to the melt at the same rate and having the same composition as material solidifies out from the melt.
Claims10
A method of manufacturing a single crystal of a composite oxide by gradually solidifying a melt comprising the steps of
- arranging a seed crystal in contact with a volume of a melt, said seed crystal initially having the top of the seed crystal between 20 and 50 mm below the top surface of said melt,
- solidifying said melt starting from said seed crystal, said melt initially consisting of not more than 25% by weight of the single crystal to be grown, and
- adding to said melt, after said single crystal begins to grow, molten material having the same composition as material solidifying from said melt, said molten material being added in such quantities that the overall quantity of said melt remains constant throughout substantially the entire process.
Dependencies are inferred from the claim text.