Method of manufacturing Schottky field-effect transistors utilizing shadow masking

A semiconductor device manufacturing method comprising the steps of:

• forming an electrically conductive active semiconductor layer on a semi-insulating semiconductor substrate;
• forming two adjacent walls of masking material on said active layer extending linearly parallel to one another, each of said two walls comprising an upper portion and a lower portion between said upper portion and said active layer;
• vacuum evaporating ohmic electrode metal obliquely with respect to vertical surfaces of said two walls to form a layer of ohmic electrode metal on said active layer except for a region of said active layer between said two walls;
• removing said upper portions to remove said layer of ohmic electrode metal formed on each upper portion;
• depositing a layer of Schottky barrier metal on said region of said active layer between said two lower portions;
• and
• removing each lower portion to remove said layer of Schottky barrier metal formed on each lower portion.