Method for producing semiconductor device
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsTakahiko Moriya, Yoshikazu Hazuki, Masahiro Kashiwagi
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Abstract
A method for producing a semiconductor device has the steps of forming an insulating film on an uneven surface of a semiconductor body; and dry etching the insulating film by using as an etchant a gas containing carbon-halogen bonds and hydrogen, whereby the surface of said insulating film is smoothed.
Claims12
A method for producing a semiconductor device, comprising the step of forming an insulating film on an uneven surface of a semiconductor body having recesses and projections, the insulating film having recesses and projections corresponding to the recesses and projections of the semiconductor body, and the step of dry-etching said insulating film using a gas containing carbon-halogen bonds and hydrogen as an etchant, whereby the projection portions of the insulating film are etched more quickly than the recess portions and the insulating film is provided with a smooth surface.
A method for producing a semiconductor device, comprising the step of forming an insulating film on an uneven surface of a semiconductor body having recesses and projections, and the step of applying reactive ion etching to the insulating film, thus depositing polymer in the recesses of the insulating film, whereby the projection portions of the insulating film are etched more quickly than the recess portions and the insulating film is provided with a smooth surface.
Dependencies are inferred from the claim text.