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US 4,364,793 AGranted
Method of etching silicon and polysilicon substrates
OwnerClinton G. Gravesinventor
Life of this patent
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Abstract
A method for etching silicon or polysilicon substrates wherein the substrates are exposed to a plasma formed by a conventional etchant enhanced by a metal halide.
Claims5
A method for etching silicon or polysilicon substrates comprising,
- supporting silicon or polysilicon substrates in a plasma reactor, the substrates having a surface exposed to a reactive plasma etch within a region of said reactor,
- injecting gaseous aluminum chloride to the plasma region, and
- terminating the plasma etch after a desired depth of silicon or polysilicon has been removed from the substrate.
A method for etching silicon or polysilicon substrates comprising,
- supporting silicon or polysilicon substrates in a plasma reactor, the substrates having a surface exposed to a reactive plasma etch within a region of said reactor,
- placing solid aluminum chloride in the plasma region, and
- terminating the plasma etch after a desired depth of silicon or polysilicon has been removed from the substrate.
Dependencies are inferred from the claim text.