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US 4,364,073 AGranted
Power MOSFET with an anode region
AssigneeRCA Corporation
InventorsHans W. Becke, Carl F. Wheatley, Jr.
Life of this patent
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Abstract
A vertical MOSFET device having source, body and drain regions, includes an anode region in series with the drain region. The source, body and drain regions have a first forward current gain and the anode, drain and body regions have a second forward current gain, such that the sum of the current gains is less than unity. The anode region provides minority carrier injection into the drain region, enhancing device performance in power applications.
Claims17
A vertical MOSFET device, comprising:
- a semiconductor substrate, including in series, adjacent source, body, drain and anode regions of alternate conductivity type;
- the body region being adjacent to a surface of the substrate;
- the source and drain regions being spaced so as to define a channel portion in the body region at said surface;
- the source, body and drain regions having a first forward current gain .alpha..sub.1 and the anode, drain and body regions having a second forward current gain .alpha..sub.2, such that the sum .alpha..sub.1 +.alpha..sub.2 is less than unity, and no thyristor action occurs under any device operating conditions.
1 more element
Dependencies are inferred from the claim text.