Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage
AssigneeHitachi, Ltd.
InventorKiyoshi Tsukuda
Life of this patent
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Abstract
Lateral type semiconductor devices are provided which can withstand a high applied reverse voltage and can be effectively employed in semiconductor integrated circuits with an enhanced integration density. These lateral type semiconductor devices include therein an island region formed in a semiconductor supporting region and a diffusion region formed in the island region. The radius of curvature at the pn junction surface of the diffusion region is selected to be at least 1.5 times larger than the depth of the diffusion region. The diffusion region includes electrode mounting portions of large area and the remaining portions having the form of a fine line.
Claims12
A lateral type semiconductor device, comprising:
- a semiconductor substrate,
- a reverse bias voltage means,
- a first diffusion region, having a conductivity type opposite to that of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions and at least one electrode mounting portion formed to have a radius of curvature of at least 1.5 times the depth of said first diffusion region at the outward corners thereof and at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and
- a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
A lateral type semiconductor device, comprising:
- a semiconductor substrate,
- a reverse voltage bias means,
- a first diffusion region, having a conductivity type opposite to that of said substrate, formed by impurity diffusion from one of the main surfaces of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions and including at least one electrode mounting portion, wherein said end portions and said electrode mounting portion are formed to have a radius of curvature at the outward corners thereof of at least 1.5 times the depth of said first diffusion region, and further wherein said strip includes at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and
- a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
A lateral type semiconductor device, comprising:
- a semiconductor substrate,
- a reverse voltage bias means,
- a first diffusion region, having a conductivity type opposite to that of said substrate, formed by impurity diffusion from one of the main surfaces of said substrate to provide a PN junction which withstands said reverse bias voltage applied therebetween, said first diffusion region forming a strip having two end portions with at least one of said end portions being an electrode mounting portion, wherein said end portions have a radius of curvature at the outside corner thereof of at least 1.5 times the depth of said first diffusion region, and wherein said strip includes at least one elongated narrow portion having a width which is narrower than a width of said electrode mounting portion, and
- a second diffusion region, having the same conductivity type as said first diffusion region, formed by impurity diffusion laterally with said first diffusion region.
Dependencies are inferred from the claim text.