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US 4,360,585 AGranted
Method of etching polymethyl methacrylate
AssigneeGeneral Electric Company
InventorsPaul A. Frank, Bruce F. Griffing
Life of this patent
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Abstract
A method is described for forming a desired pattern in a layer of polymethyl methacrylate resist formed on a substrate by irradiating the layer with a pattern of radiation substantially identical to the desired pattern and thereafter immersing the layer of polymethyl methacrylate in a solution of acetone to remove the irradiated portion of the layer of polymethyl methacrylate.
Claims5
A method of forming a first pattern in a first layer of polymethyl methacrylate formed on the surface of a substrate comprising:
- providing said substrate having said surface,
- forming said first layer of polymethyl methacrylate on said surface,
- forming a second layer of a resist containing a novalak resin on said first layer of polymethyl methacrylate,
- forming in said second layer a second pattern which is substantially identical to said first pattern to expose portions of said first layers of polymethyl methacrylate uncovered thereby,
- irradiating said second layer and said exposed portions of said first layer of polymethyl methacrylate with radiation to which polymethyl methacrylate is sensitive for a time to substantially depolymerize said exposed portions of polymethyl methacrylate,
- treating said first and second layers in a solution including acetone to remove said exposed portions of said first layer of polymethyl methacrylate and said second layer of resist.
3 more elements
Dependencies are inferred from the claim text.